IEEE - Institute of Electrical and Electronics Engineers, Inc. - Green laser annealing with light absorber

13th IEEE International Conference on Advanced Thermal Processing of Semiconductors

Author(s): K. Shibahara ; A. Matsuno ; E. Takii ; T. Eto
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2005
Conference Location: Santa Barbara, CA, USA
Conference Date: 4 October 2005
ISBN (Paper): 0-7803-9223-X
DOI: 10.1109/RTP.2005.1613689
Regular:

To compensate deep penetration depth of green laser light into Si, metal absorber was formed on a specimen. TiN absorber was effective to reduce necessary laser energy density to activate dopant,... View More

Advertisement