IEEE - Institute of Electrical and Electronics Engineers, Inc. - I-V characteristic of BJMOSFET based on SOI

2005 6th International Conference on ASIC Proceedings

Author(s): Zeng Yun ; Li Xiaolei ; Zhang Yan ; Zhang Ling
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2005
Conference Location: Shanghai, China
Conference Date: 24 October 2005
Volume: 2
Page(s): 1,027 - 1,031
ISBN (Paper): 0-7803-9210-8
DOI: 10.1109/ICASIC.2005.1611499
Regular:

In this paper, BJMOSFET based on SOI is proposed and the numerical model of the I-V characteristics of SOI BJMOSFET is obtained. Using the circuit simulation software of PSPICE, the I-V... View More

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