IEEE - Institute of Electrical and Electronics Engineers, Inc. - Study of particularities for metal contact formation to the semiconductor high-resistance GaAs:Cr

IEEE International Siberian Conference on Control and Communications

Author(s): D.L. Budnitsky ; A.D. Lychagin ; L.S. Okaevich ; O.P. Tolbanov
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2005
Conference Location: Tomsk, Russia, Russia
Conference Date: 21 October 2005
Page(s): 85 - 89
ISBN (Paper): 0-7803-9219-1
DOI: 10.1109/SIBCON.2005.1611198
Regular:

In the paper, studies of volt-ampere and volt-luxing characteristics of the detector structures based on gallium arsenide, compensated by chromium are carried out. It is shown that metallic... View More

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