IEEE - Institute of Electrical and Electronics Engineers, Inc. - Analysis of free-carrier charges distribution in the n-GaAs monocrystals used at formation of the high-resistance material for the ionizing radiation sensors

IEEE International Siberian Conference on Control and Communications

Author(s): D.L. Budnitsky ; O.B. Koretskaya ; V.A. Novikov ; O.P. Tolbanov
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2005
Conference Location: Tomsk, Russia, Russia
Conference Date: 21 October 2005
Page(s): 80 - 84
ISBN (Paper): 0-7803-9219-1
DOI: 10.1109/SIBCON.2005.1611197
Regular:

In the paper, analysis of charge distribution in the gallium arsenide monocrystals are presented. The absorption spectrums are investigated. It is described that non-destroying testing of... View More

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