IEEE - Institute of Electrical and Electronics Engineers, Inc. - An investigation on substrate current and hot carrier degradation at elevated temperatures for nMOSFETs of 0.13 /spl mu/m technology

2005 IEEE International Integrated Reliability Workshop Final Report

Author(s): S.Y. Chen ; J.C. Lin ; H.W. Chen ; Z.W. Jhou ; H.C. Lin ; S. Chou ; J. Ko ; T.F. Lei ; H.S. Haung
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2005
Conference Location: S. Lake Tahoe, CA, USA
Conference Date: 17 October 2005
ISBN (Paper): 0-7803-8992-1
DOI: 10.1109/IRWS.2005.1609579
Regular:

In this report, nMOSFETs having 20 Aring and 32 Aring gate oxide thickness of 0.13 mum technology are used to investigate DC hot carrier reliability at elevated temperatures up to 125degC. The... View More

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