IEEE - Institute of Electrical and Electronics Engineers, Inc. - 2 /spl mu/m emission from Si/Ge heterojunction LED and up to 1.55 /spl mu/m detection by GOI detectors with strain-enhanced features

International Electron Devices Meeting 2005

Author(s): M.H. Liao ; C.Y. Yu ; C.F. Huang ; C.H. Lin ; C.J. Lee ; M.H. Yu ; S.T. Chang ; C.Y. Liang ; C.Y. Lee ; T.H. Guo ; C.C. Chang ; C.W. Liu
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2005
Conference Location: Washington, DC, USA
Conference Date: 5 December 2005
Page Count: 4
ISBN (Paper): 0-7803-9268-X
DOI: 10.1109/IEDM.2005.1609532
Regular:

The Ge/Si heterojunction MOS LED can emit ~2 mum light due to the radiative recombination at type II heterojunction. The fully depleted 800 nm germanium on insulator (GOI) can increase the... View More

Advertisement