IEEE - Institute of Electrical and Electronics Engineers, Inc. - A novel CMOS compatible L-shaped impact-ionization MOS (LI-MOS) transistor

International Electron Devices Meeting 2005

Author(s): Eng-Huat Toh ; Grace Huiqi Wang ; Guo-Qiang Lo ; N. Balasubramanian ; Chih-Hang Tung ; F. Benistant ; L. Chan ; G. Samudra ; Yee-Chia Yeo
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2005
Conference Location: Washington, DC, USA
Conference Date: 5 December 2005
Page Count: 4
Page(s): 951 - 954
ISBN (Paper): 0-7803-9268-X
DOI: 10.1109/IEDM.2005.1609518
Regular:

This paper reports a novel L-shaped impact-ionization MOS (LI-MOS) transistor technology that achieves subthreshold swing well below 60 mV/decade at room temperature. First, the LI-MOS transistor... View More

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