IEEE - Institute of Electrical and Electronics Engineers, Inc. - Vth-tunable CMIS platform with high-k gate dielectrics and variability effect for 45nm node

International Electron Devices Meeting 2005

Author(s): T. Hayashi ; M. Mizutani ; M. Inoue ; J. Yugami ; J. Tsuchimoto ; M. Anma ; S. Komori ; K. Tsukamoto ; Y. Tsukamoto ; K. Nii ; Y. Nishida ; H. Sayama ; T. Yamashita ; H. Oda ; T. Eimori ; Y. Ohji
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2005
Conference Location: Washington, DC, USA
Conference Date: 5 December 2005
Page Count: 4
Page(s): 906 - 909
ISBN (Paper): 0-7803-9268-X
DOI: 10.1109/IEDM.2005.1609505
Regular:

A simple high-k/poly-Si dual-gate CMIS platform with a novel method to control threshold voltage (Vth) has been proposed for 45nm node. The PMIS Vth control method is a simple selective... View More

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