IEEE - Institute of Electrical and Electronics Engineers, Inc. - High performance nMOSFET with HfSi/subx//HfO/sub 2/ gate stack by low temperature process

International Electron Devices Meeting 2005

Author(s): T. Hirano ; T. Ando ; K. Tai ; S. Yamaguchi ; T. Kato ; S. Hiyama ; Y. Hagimoto ; S. Takesako ; N. Yamagishi ; K. Watanabe ; R. Yamamoto ; S. Kanda ; S. Terauchi ; Y. Tateshita ; Y. Tagawa ; H. Iwamoto ; M. Saito ; S. Kadomura ; N. Nagashima
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2005
Conference Location: Washington, DC, USA
Conference Date: 5 December 2005
Page Count: 4
Page(s): 890 - 893
ISBN (Paper): 0-7803-9268-X
DOI: 10.1109/IEDM.2005.1609501
Regular:

We propose HfSix/HfO2 gate stacks as the most suitable combination for high performance nMOSFETs. An equivalent work function (WF) to n+poly-Si was obtained by... View More

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