IEEE - Institute of Electrical and Electronics Engineers, Inc. - Non-uniform degradation behavior across device width in RF power GaAs PHEMTs

International Electron Devices Meeting 2005

Author(s): A.A. Villanueva ; J.A. del Alamo ; T. Hisaka ; K. Hayashi ; M. Somerville
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2005
Conference Location: Washington, DC, USA
Conference Date: 5 December 2005
Page Count: 4
Page(s): 783 - 786
ISBN (Paper): 0-7803-9268-X
DOI: 10.1109/IEDM.2005.1609471
Regular:

We have studied the electrical degradation of RF power PHEMTs by means of light-emission measurements performed during bias-stress experiments. We show that electrical degradation can proceed in a... View More

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