IEEE - Institute of Electrical and Electronics Engineers, Inc. - Defect passivation with fluorine in a Ta/sub x/C/ high-K gate stack for enhanced device threshold voltage stability and performance

International Electron Devices Meeting 2005

Author(s): H.-H. Tseng ; P.J. Tobin ; E.A. Hebert ; S. Kalpat ; M.E. Ramon ; L. Fonseca ; Z.X. Jiang ; J.K. Schaeffer ; R.I. Hegde ; D.H. Triyoso ; D.C. Gilmer ; W.J. Taylor ; C.C. Capasso ; O. Adetutu ; D. Sing ; J. Conner ; E. Luckowski ; B.W. Chan ; A. Haggag ; S. Backer ; R. Noble ; M. Jahanbani ; Y.H. Chili ; B.E. White
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2005
Conference Location: Washington, DC, USA
Conference Date: 5 December 2005
Page Count: 4
Page(s): 696 - 699
ISBN (Paper): 0-7803-9268-X
DOI: 10.1109/IEDM.2005.1609447
Regular:

Using a novel fluorinated TaxCy/high-k gate stack, we show breakthrough device reliability and performance improvements. This is a critical result since threshold voltage... View More

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