IEEE - Institute of Electrical and Electronics Engineers, Inc. - Negative bias temperature instability of carrier-transport enhanced pMOSFET with performance boosters

International Electron Devices Meeting 2005

Author(s): Hwa Sung Rhee ; Ho Lee ; Tetsuji Ueno ; Dong Suk Shin ; Seung Hwan Lee ; Yihwan Kim ; A. Samoilov ; P.-O. Hansson ; Min Kim ; Hyong Soo Kim ; Nae-In Lee
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2005
Conference Location: Washington, DC, USA
Conference Date: 5 December 2005
Page Count: 4
Page(s): 692 - 695
ISBN (Paper): 0-7803-9268-X
DOI: 10.1109/IEDM.2005.1609446
Regular:

The effects of mobility boosters such as straining technologies and modified transport direction emerging for 65 nm pFET and beyond on negative bias temperature instability (NBTI) have been... View More

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