IEEE - Institute of Electrical and Electronics Engineers, Inc. - Investigation of the performance limits of III-V double-gate n-MOSFETs

International Electron Devices Meeting 2005

Author(s): Abhijit Pethe ; Tejas Krishnamohan ; Donghyun Kim ; Saeroonter Oh ; H.-S.P. Wong ; Yoshio Nishi ; K.C. Saraswat
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2005
Conference Location: Washington, DC, USA
Conference Date: 5 December 2005
Page Count: 4
Page(s): 605 - 608
ISBN (Paper): 0-7803-9268-X
DOI: 10.1109/IEDM.2005.1609422
Regular:

The performance limits of ultra-thin body double-gated (DG) III-V channel MOSFETs are presented in this paper. An analytical ballistic model including all the valleys (Gamma-, X- and L-), was used... View More

Advertisement