IEEE - Institute of Electrical and Electronics Engineers, Inc. - A new charge-trapping technique to extract SILC-trap time constants in SiO/sub 2/

International Electron Devices Meeting 2005

Author(s): D. Ielmini ; A.S. Spinelli ; A.L. Lacaita ; L. Chiavarone ; A. Visconti
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2005
Conference Location: Washington, DC, USA
Conference Date: 5 December 2005
Page Count: 4
Page(s): 543 - 546
ISBN (Paper): 0-7803-9268-X
DOI: 10.1109/IEDM.2005.1609403
Regular:

A new experimental technique for investigating the trapping-detrapping time constants for electrons at stress-induced defects in the silicon oxide is presented. The new technique is based on the... View More

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