IEEE - Institute of Electrical and Electronics Engineers, Inc. - Uniaxial-biaxial stress hybridization for super-critical strained-si directly on insulator (SC-SSOI) PMOS with different channel orientations.

International Electron Devices Meeting 2005

Author(s): A.V.-Y. Thean ; J. Cheek ; S. Venkatesan ; J. Mogab ; C.H. Chang ; Y.H. Chiu ; H.C. Tuan ; Y.C. See ; M.S. Liang ; Y.C. Sun ; L. Prabhu ; V. Vartanian ; M. Ramon ; B.-Y. Nguyen ; T. White ; H. Collard ; Q.-H. Xie ; S. Murphy
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2005
Conference Location: Washington, DC, USA
Conference Date: 5 December 2005
Page(s): 509 - 512
ISBN (Paper): 0-7803-9268-X
ISSN (Electronic): 2156-017X
ISSN (Paper): 0163-1918
DOI: 10.1109/IEDM.2005.1609393
Regular:

This paper describes the novel stress engineering of SC-SSOI devices through the interactions between biaxial lattice strain, uniaxial relaxation, process-induced stressor and channel orientation.... View More

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