IEEE - Institute of Electrical and Electronics Engineers, Inc. - Source/drain germanium condensation for p-channel strained ultra-thin body transistors

International Electron Devices Meeting 2005

Author(s): King-Jien Chui ; Kah-Wee Ang ; Anuj Madan ; Huiqi Wang ; Chih-Hang Tung ; Lai-Yin Wong ; Yihua Wang ; Siew-Fong Choy ; N. Balasubramanian ; Ming Fu Li ; Ganesh Samudra ; Yee-Chia Yeo
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2005
Conference Location: Washington, DC, USA
Conference Date: 5 December 2005
Page Count: 4
Page(s): 493 - 496
ISBN (Paper): 0-7803-9268-X
DOI: 10.1109/IEDM.2005.1609389
Regular:

This paper reports a novel technique to fabricate uniaxial compressive strained p-channel transistors with silicon-germanium (SiGe) source and drain (S/D) stressors. The process involves local Ge... View More

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