IEEE - Institute of Electrical and Electronics Engineers, Inc. - Dielectric resurf: breakdown voltage control by STI layout in standard CMOS

International Electron Devices Meeting 2005

Author(s): J. Sonsky ; A. Heringa
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2005
Conference Location: Washington, DC, USA
Conference Date: 5 December 2005
Page Count: 4
ISBN (Paper): 0-7803-9268-X
DOI: 10.1109/IEDM.2005.1609354
Regular:

We demonstrate a novel device concept, in which junctions (active regions in CMOS) are interleaved with dielectric regions (STI) in order to increase the junction breakdown voltage. Experiments... View More

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