IEEE - Institute of Electrical and Electronics Engineers, Inc. - A novel NAND-type MONOS memory using 63nm process technology for multi-gigabit flash EEPROMs

International Electron Devices Meeting 2005

Author(s): Yoocheol Shin ; Jungdal Choi ; Changseok Kang ; Changhyun Lee ; Ki-Tae Park ; Jang-Sik Lee ; Jongsun Sel ; V. Kim ; Byeongin Choi ; Jaesung Sim ; Dongchan Kim ; Hag-ju Cho ; Kinam Kim
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2005
Conference Location: Washington, DC, USA
Conference Date: 5 December 2005
Page Count: 4
Page(s): 327 - 330
ISBN (Paper): 0-7803-9268-X
DOI: 10.1109/IEDM.2005.1609341
Regular:

A NAND-type MONOS device has been successfully developed by breakthrough technologies including optimized cell structures and integration schemes providing favorable memory cell structures and... View More

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