IEEE - Institute of Electrical and Electronics Engineers, Inc. - A wideband fully integrated SiGe BiCMOS medium power amplifier

2005 13th European Gallium Arsenide and other Compound Semiconductors Application Symposium

Author(s): Hyun-Cheol BAe ; Sang-Hoon Kim ; Young-Joo Song ; Sang-Heung Lee ; Ja-Yol Lee ; Jin-Young Kang
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2005
Conference Location: Paris, France
Conference Date: 3 October 2005
Page Count: 4
Page(s): 681 - 684
ISBN (Paper): 88-902012-0-7
DOI: 10.1109/EUMC.2005.1610267
Regular:

In this paper, a wideband 3.0 GHz-5.5 GHz medium power amplifier has been designed and fabricated using 0.8 /spl mu/m SiGe BiCMOS process technology. Passive elements such as parallel-branch... View More

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