IEEE - Institute of Electrical and Electronics Engineers, Inc. - Influence of envelope impedance termination on RF behaviour of GaN HEMT power devices

2005 13th European Gallium Arsenide and other Compound Semiconductors Application Symposium

Author(s): B. Bunz ; A. Ahmed ; G. Kompa
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2005
Conference Location: Paris, France
Conference Date: 3 October 2005
Page Count: 4
Page(s): 649 - 652
ISBN (Paper): 88-902012-0-7
DOI: 10.1109/EUMC.2005.1610259
Regular:

The influence of envelope source and load terminations on the RF performance of high power GaN amplifiers is investigated. An error-corrected two-tone measurement system has been developed... View More

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