IEEE - Institute of Electrical and Electronics Engineers, Inc. - 10-40 GHz design in SiGe-BiCMOS and Si-CMOS - linking technology and circuits to maximize performance

2005 13th European Gallium Arsenide and other Compound Semiconductors Application Symposium

Author(s): H. Veenstra ; G.A.M. Hurkx ; E. Heijden ; C.S. Vaucher ; M. Apostolidou ; D. Jeurissen ; P. Deixler
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2005
Conference Location: Paris, France
Conference Date: 3 October 2005
Page Count: 4
Page(s): 525 - 528
ISBN (Paper): 88-902012-0-7
Regular:

This paper reviews the relevance of the widely used device metrics f/sub T/, f/sub max/ as well as the recently introduced device metrics f/sub A/ and f/sub cross/ for broadband circuit design.... View More

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