IEEE - Institute of Electrical and Electronics Engineers, Inc. - A low-noise, high-linearity balanced amplifier in enhancement-mode GaAs pHEMT technology for wireless base-stations

2005 13th European Gallium Arsenide and other Compound Semiconductors Application Symposium

Author(s): T. Chong
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2005
Conference Location: Paris, France
Conference Date: 3 October 2005
Page Count: 4
Page(s): 461 - 464
ISBN (Paper): 88-902012-0-7
Regular:

This paper describes the design and realization of a balanced low-noise amplifier (LNA) module in the 2 GHz band suitable for wireless infrastructure (base-station) receiver front-end... View More

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