IEEE - Institute of Electrical and Electronics Engineers, Inc. - Advanced manufacturing techniques for next generation power FET Technology

2005 13th European Gallium Arsenide and other Compound Semiconductors Application Symposium

Author(s): M.C. Clausen ; J. McMonagle
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2005
Conference Location: Paris, France
Conference Date: 3 October 2005
Page Count: 4
Page(s): 429 - 432
ISBN (Paper): 88-902012-0-7
Regular:

The development and incorporation of an evaporated airbridge technology into an established power pHEMT device is described. Advantages of this technology over a conventional plated technology are... View More

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