IEEE - Institute of Electrical and Electronics Engineers, Inc. - Electrical and structural properties of low-temperature-grown In/sub 0.53/Ga/sub 0.47/As on GaAs using an InGaAlAs metamorphic buffer

2005 13th European Gallium Arsenide and other Compound Semiconductors Application Symposium

Author(s): Seong June Jo ; Soo-Ghang Ihn ; Tae-Woo Kim ; Ki-Ju Yee ; Moon-Seop Hwang ; Dong-Han Lee ; Jong-In Song
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2005
Conference Location: Paris, France
Conference Date: 3 October 2005
Page Count: 4
Page(s): 425 - 427
ISBN (Paper): 88-902012-0-7
Regular:

Electrical and structural properties of low-temperature-grown In/sub 0.53/Ga/sub 0.47/As (LT-InGaAs) on GaAs using an InGaAlAs metamorphic buffer (M-buffer) were studied. Dependence of... View More

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