IEEE - Institute of Electrical and Electronics Engineers, Inc. - GaN H-FET development at QinetiQ

2005 13th European Gallium Arsenide and other Compound Semiconductors Application Symposium

Author(s): T. Martin ; M.J. Uren ; R.S. Balmer ; D. Soley ; D.J. Wallis ; K.P. Hilton ; J.O. Maclean ; A.G. Munday ; A.J. Hydes ; D.G. Hayes ; C.H. Oxley ; P. McGovern ; P.J. Tasker
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2005
Conference Location: Paris, France
Conference Date: 3 October 2005
Page Count: 3
Page(s): 365 - 367
ISBN (Paper): 88-902012-0-7
Regular:

The AlGaN/GaN HFET project at QinetiQ has the capability to grow high quality layers using MOVPE, fabricate HFETs with 0.8 and 0.25 /spl mu/m gate length and fabricate amplifiers. Here we present... View More

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