IEEE - Institute of Electrical and Electronics Engineers, Inc. - A monolithic integrated 180 GHz SiGe HBT push-push oscillator

2005 13th European Gallium Arsenide and other Compound Semiconductors Application Symposium

Author(s): P. Roux ; Y. Baeyens ; O. Wohlgemuth ; Y.K. Chen
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2005
Conference Location: Paris, France
Conference Date: 3 October 2005
Page Count: 3
Page(s): 341 - 343
ISBN (Paper): 88-902012-0-7
Regular:

A fully integrated single-ended output push-push oscillator is realized using an advanced 0.2 /spl mu/m SiGe HBT process. Up to -5 dBm output power is achieved at 180 GHz using a technology with a... View More

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