IEEE - Institute of Electrical and Electronics Engineers, Inc. - AlGaN/GaN high electron mobility transistor (HEMT) reliability

2005 13th European Gallium Arsenide and other Compound Semiconductors Application Symposium

Author(s): D. Pavlidis ; P. Valizadeh ; S.H. Hsu
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2005
Conference Location: Paris, France
Conference Date: 3 October 2005
Page Count: 4
Page(s): 265 - 268
ISBN (Paper): 88-902012-0-7
Regular:

The reliability characteristics of AlGaN/GaN HEMTs are reviewed. Basic effects such as the discrepancy between DC predicted and RF measured power are addressed together with effects such as drain... View More

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