IEEE - Institute of Electrical and Electronics Engineers, Inc. - A low-noise X-band microstrip VCO with 2.5 GHz tuning range using a GaN-on-SiC p-HEMT

2005 13th European Gallium Arsenide and other Compound Semiconductors Application Symposium

Author(s): A.P.M. Maas ; F.E. van Vliet
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2005
Conference Location: Paris, France
Conference Date: 3 October 2005
Page Count: 4
Page(s): 257 - 260
ISBN (Paper): 88-902012-0-7
Regular:

A low-noise X-band microstrip hybrid VCO has been designed and realised using a 2 /spl times/ 50 /spl mu/m GaN-on-SiC pseudo-morphic HEMT as the active device. The transistor has been manufactured... View More

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