IEEE - Institute of Electrical and Electronics Engineers, Inc. - Ka-band AlGaN/GaN HEMT high power and driver amplifier MMICs

2005 13th European Gallium Arsenide and other Compound Semiconductors Application Symposium

Author(s): M. van Heijningen ; F.E. van Vliet ; R. Quay ; F. van Raay ; R. Kiefer ; S. Muller ; D. Krausse ; M. Seelmann-Eggebert ; M. Mikulla ; M. Schlechtweg
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2005
Conference Location: Paris, France
Conference Date: 3 October 2005
Page Count: 4
Page(s): 237 - 240
ISBN (Paper): 88-902012-0-7
Regular:

In this paper the MMIC technology, design and characterization of a high power amplifier and driver amplifier MMIC at 30 GHz in AlGaN/GaN HEMT technology are presented. The MMICs are designed... View More

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