IEEE - Institute of Electrical and Electronics Engineers, Inc. - Noise assessment of AlGaN/GaN HEMTs on Si or SiC substrates: application to X-band low noise amplifiers

2005 13th European Gallium Arsenide and other Compound Semiconductors Application Symposium

Author(s): J.C. De Jaeger ; S.L. Delage ; G. Dambrine ; M.A. Di Forte Poisson ; V. Hoel ; S. Lepilliet ; B. Grimbert ; E. Morvan ; Y. Mancuso ; G. Gauthier ; A. Lefrancois ; Y. Cordier
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2005
Conference Location: Paris, France
Conference Date: 3 October 2005
Page Count: 4
Page(s): 229 - 232
ISBN (Paper): 88-902012-0-7
Regular:

This study regards the low noise properties of X-band GaN-based LNAs as well as its associated robustness. Devices are processed on epilayers grown on SiC or Si substrates. The HEMTs present very... View More

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