IEEE - Institute of Electrical and Electronics Engineers, Inc. - Analysis of device scaling towards the performance enhancement of Si-MOSFET RF amplifiers

2005 13th European Gallium Arsenide and other Compound Semiconductors Application Symposium

Author(s): P. Sen ; N. Srirattana ; A. Raghavan ; J. Laskar
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2005
Conference Location: Paris, France
Conference Date: 3 October 2005
Page Count: 4
Page(s): 221 - 224
ISBN (Paper): 88-902012-0-7
Regular:

This paper explains the importance of device size and DC bias conditions for the gain and linearity performance enhancement of silicon based RF amplifiers. In this work, the existence of an... View More

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