IEEE - Institute of Electrical and Electronics Engineers, Inc. - A W-band MMIC amplifier using 70-nm gate length InP HEMT technology

2005 13th European Gallium Arsenide and other Compound Semiconductors Application Symposium

Author(s): M. Malmkvist ; A. Mellberg ; J. Grahn
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2005
Conference Location: Paris, France
Conference Date: 3 October 2005
Page Count: 4
Page(s): 165 - 168
ISBN (Paper): 88-902012-0-7
Regular:

InP HEMT transistors using 70-nm gate length have been fabricated and modeled. Two different epitaxial structures have been tested based on either single-or composite InGaAs channel. The... View More

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