IEEE - Institute of Electrical and Electronics Engineers, Inc. - Novel base doping profile for improved speed and power

2005 13th European Gallium Arsenide and other Compound Semiconductors Application Symposium

Author(s): E.M. Rehder ; C. Cismaru ; P.J. Zampardi ; R.E. Welser
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2005
Conference Location: Paris, France
Conference Date: 3 October 2005
Page Count: 4
Page(s): 157 - 160
ISBN (Paper): 88-902012-0-7
Regular:

We have experimentally studied the effect of two new base doping profiles on the base transit time of a GaAs npn heterojunction bipolar transistor. The doping in a region close to the collector is... View More

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