IEEE - Institute of Electrical and Electronics Engineers, Inc. - High frequency low noise potentialities of down to 65 nm technology nodes MOSFETs

2005 13th European Gallium Arsenide and other Compound Semiconductors Application Symposium

Author(s): G. Dambrine ; D. Gloria ; P. Scheer ; C. Raynaud ; F. Danneville ; S. Lepilliet ; A. Siligaris ; G. Pailloncy ; B. Martineau ; E. Bouhana ; R. Valentin
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2005
Conference Location: Paris, France
Conference Date: 3 October 2005
Page Count: 4
Page(s): 97 - 100
ISBN (Paper): 88-902012-0-7
Regular:

65 nm n-MOSFETs show state-of-the-art cut-off frequency with ft = 210 GHz and microwave low noise and high gain properties (NFmin = 0.8 dB and Gass = 17.3 dB at 12... View More

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