IEEE - Institute of Electrical and Electronics Engineers, Inc. - A metamorphic GaAs HEMT distributed amplifier with 50 GHz bandwidth and low noise for 40 Gbits/s optical receivers

2005 13th European Gallium Arsenide and other Compound Semiconductors Application Symposium

Author(s): G. Wolf ; S. Demichel ; R. Leblanc ; F. Blache ; R. Lefevre ; G. Dambrine ; H. Happy
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2005
Conference Location: Paris, France
Conference Date: 3 October 2005
Page Count: 4
Page(s): 93 - 95
ISBN (Paper): 88-902012-0-7
Regular:

An eight stage distributed amplifier with 12.5 dB /spl plusmn/ 0.45 dB gain and 50 GHz bandwidth has been demonstrated in a commercially available 0.1 /spl mu/m metamorphic GaAs HEMT (MHEMT)... View More

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