IEEE - Institute of Electrical and Electronics Engineers, Inc. - Low noise and high linearity LNA based on InGaP/GaAs HBT for 5.3 GHz WLAN

2005 13th European Gallium Arsenide and other Compound Semiconductors Application Symposium

Author(s): Seong-Sik Myoung ; Sang-Hoon Cheon ; Jong-Gwan Yook
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2005
Conference Location: Paris, France
Conference Date: 3 October 2005
Page Count: 4
Page(s): 89 - 92
ISBN (Paper): 88-902012-0-7
Regular:

This paper presents a low noise and high linearity LNA based on InGaP/GaAs HBT for 5.3 GHz WLAN. Previous LNAs based on FET series such as HEMT show excellent noise characteristics, but poor... View More

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