IEEE - Institute of Electrical and Electronics Engineers, Inc. - High gain 110-GHz low noise amplifier MMICs using 120-nm metamorphic HEMTs and coplanar waveguides

2005 13th European Gallium Arsenide and other Compound Semiconductors Application Symposium

Author(s): A. Bessemoulin ; P. Fellon ; J. Gruenenpuett ; H. Massler ; W. Reinert ; E. Kohn ; A. Tessmann
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2005
Conference Location: Paris, France
Conference Date: 3 October 2005
Page Count: 4
Page(s): 77 - 80
ISBN (Paper): 88-902012-0-7
Regular:

This paper presents the design and performance of 110-GHz low noise amplifier MMICs, based on coplanar technology, and utilizing 120-nm gate-length metamorphic HEMTs. Thanks to a cascode device, a... View More

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