IEEE - Institute of Electrical and Electronics Engineers, Inc. - Investigation of Ni Induced Deep Levels in N-Type Si by a Temperature Dependence of Piezoelectric Photothermal and Surface Photovoltage Signals

2005 International Semiconductor Device Research Symposium

Author(s): S. Sato ; S.-i. Fukushima ; S. Tanaka ; K. Sakai ; A. Fukuyama ; T. Ikari
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2005
Conference Location: Bethesda, MD, USA
Conference Date: 7 December 2005
Page Count: 2
Page(s): 410 - 411
ISBN (Paper): 1-4244-0083-X
DOI: 10.1109/ISDRS.2005.1596160
Advertisement