IEEE - Institute of Electrical and Electronics Engineers, Inc. - Compact n-well design of high density p-type bulk finFET for CMOS technology

2005 International Semiconductor Device Research Symposium

Author(s): Byung-Kil Choi ; Kwang-Ho Baek ; Young Min Kim ; Jong-Ho Lee
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2005
Conference Location: Bethesda, MD, USA
Conference Date: 7 December 2005
Page Count: 2
Page(s): 400 - 401
ISBN (Paper): 1-4244-0083-X
DOI: 10.1109/ISDRS.2005.1596155
Regular:

We designed n-well of bulk FinFET for very large scale integration (VLSI) in CMOS application. In this study, we focused on a parasitic vertical p+-n-p bipolar junction transistor (BJT)... View More

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