IEEE - Institute of Electrical and Electronics Engineers, Inc. - First Principle Study of Si and Ge Band Structure for UTB MOSFETs Applications

2005 International Semiconductor Device Research Symposium

Author(s): T. Low ; Y.P. Feng ; M.F. Li ; G. Samudra ; Y.C. Yeo ; P. Bai ; L. Chan ; D.L. Kwong
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2005
Conference Location: Bethesda, MD, USA
Conference Date: 7 December 2005
Page(s): 358 - 359
ISBN (Paper): 1-4244-0083-X
DOI: 10.1109/ISDRS.2005.1596134
Regular:

Ab initio study of the band structures of Si and Ge thin film is conducted for all common surface orientations with film thickness ranging from 4nm to 1nm. The ab initio calculation predicts... View More

Advertisement