IEEE - Institute of Electrical and Electronics Engineers, Inc. - Monitoring the Self-Heating in a High Frequency GaN HFET

2005 International Semiconductor Device Research Symposium

Author(s): S.P. McAlister ; J.A. Bardwell ; S. Haffouz ; H. Tang
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2005
Conference Location: Bethesda, MD, USA
Conference Date: 7 December 2005
Page Count: 2
Page(s): 248 - 249
ISBN (Paper): 1-4244-0083-X
DOI: 10.1109/ISDRS.2005.1596077
Regular:

Self-heating in GaN HFETs is a consequence of the high power and current levels common in such devices, and the limited ability of the substrates to conduct heat away from the devices. Most high... View More

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