IEEE - Institute of Electrical and Electronics Engineers, Inc. - Physics of Textured III-Nitride Quantum Wells for Applications to LEDs

2005 International Semiconductor Device Research Symposium

Author(s): T.D. Moustakas ; J.S. Cabalu ; S. Riyopoulus
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2005
Conference Location: Bethesda, MD, USA
Conference Date: 7 December 2005
Page Count: 1
Page(s): 220
ISBN (Paper): 1-4244-0083-X
DOI: 10.1109/ISDRS.2005.1596062
Regular:

Summary form only given. In this paper we report the growth of GaN/AlGaN MQWs by MBE on atomically-smooth (0001) GaN templates and (0001)-oriented GaN templates with random surface texture. We... View More

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