IEEE - Institute of Electrical and Electronics Engineers, Inc. - Magnetic Properties of Atomic-Layer-Deposited Hafnium Dioxide

2005 International Semiconductor Device Research Symposium

Author(s): H.-Y. Chen ; P.D. Ye ; J. Murray ; P. Xiong ; S. von Molnar ; G.D. Wilk
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2005
Conference Location: Bethesda, MD, USA
Conference Date: 7 December 2005
Page Count: 2
Page(s): 217 - 218
ISBN (Paper): 1-4244-0083-X
DOI: 10.1109/ISDRS.2005.1596060
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