IEEE - Institute of Electrical and Electronics Engineers, Inc. - Electrical Characterization of Defects in High-k Gate Dielectrics

2005 International Semiconductor Device Research Symposium

Author(s): E.M. Vogel
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2005
Conference Location: Bethesda, MD, USA
Conference Date: 7 December 2005
Page Count: 2
Page(s): 209 - 210
ISBN (Paper): 1-4244-0083-X
DOI: 10.1109/ISDRS.2005.1596056
Regular:

This paper describes the electrical characterization of defects in high-k dielectrics using a variety of techniques including capacitance-voltage, conductance, and charge-pumping, and the... View More

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