IEEE - Institute of Electrical and Electronics Engineers, Inc. - An Ultrahigh Performance 8 GHz SiGe Power HBT

2005 International Semiconductor Device Research Symposium

Author(s): Guogong Wang ; Hao-chih Yuan ; Zhenqiang Ma
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2005
Conference Location: Bethesda, MD, USA
Conference Date: 7 December 2005
Page(s): 181 - 182
ISBN (Paper): 1-4244-0083-X
DOI: 10.1109/ISDRS.2005.1596042
Regular:

A new record (FOM=3.8times105 mWmiddotGHz2 ) of power performance for SiGe power HBTs has been established in this study. By employing an extremely heavily doped base region,... View More

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