IEEE - Institute of Electrical and Electronics Engineers, Inc. - An Assessment of Single-Electron Effects in Multiple-Gate SOI MOSFETs with 1.6-nm Gate Oxide near Room Temperature

2005 International Semiconductor Device Research Symposium

Author(s): Wei Lee ; Pin Su ; Hou-Yu Chen ; Chang-Yun Chang ; KeWei Su ; S. Liu ; FuLiang Yang
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2005
Conference Location: Bethesda, MD, USA
Conference Date: 7 December 2005
Page Count: 2
Page(s): 175 - 176
ISBN (Paper): 1-4244-0083-X
DOI: 10.1109/ISDRS.2005.1596039
Regular:

To allow high-temperature operation, the size of the SET needs to be further reduced (Peters et al., 1998). The suppression of short-channel effects, therefore, is especially critical to enabling... View More

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