IEEE - Institute of Electrical and Electronics Engineers, Inc. - High Temperature Characterization of SiC BJTs for Power Switching Applications

2005 International Semiconductor Device Research Symposium

Author(s): K. Sheng ; L.C. Yu ; J. Zhang ; J.H. Zhao
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2005
Conference Location: Bethesda, MD, USA
Conference Date: 7 December 2005
Page Count: 2
Page(s): 168 - 169
ISBN (Paper): 1-4244-0083-X
DOI: 10.1109/ISDRS.2005.1596035
Regular:

In this paper, SiC BJTs with a blocking voltage of 1836V are characterized in power switching applications for temperatures up to 275degC. Inductive switching speeds under different load current... View More

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