IEEE - Institute of Electrical and Electronics Engineers, Inc. - 2.1 m/spl Omega/-cm2, 1.6 kV 4H-Silicon Carbide VJFET for Power Applications

2005 International Semiconductor Device Research Symposium

Author(s): V. Veliadis ; Li-Shu Chen ; E. Stewart ; M. McCoy ; T. McNutt ; S. Van Campen ; C. Clarke ; G. DeSalvo
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2005
Conference Location: Bethesda, MD, USA
Conference Date: 7 December 2005
Page Count: 2
Page(s): 166 - 167
ISBN (Paper): 1-4244-0083-X
DOI: 10.1109/ISDRS.2005.1596034
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