IEEE - Institute of Electrical and Electronics Engineers, Inc. - High Speed Switching Devices in 4H-SiC - Performance and Reliability

2005 International Semiconductor Device Research Symposium

Author(s): Sei-Hyung Ryu ; S. Krishnaswami ; B. Hull ; B. Heath ; M. Das ; J. Richmond ; H. Fatima ; J. Zhang ; A. Agarwal ; J. Palmour ; A. Lelis ; B. Geil ; D. Katsis ; C. Scozzie ; J. Scofield
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2005
Conference Location: Bethesda, MD, USA
Conference Date: 7 December 2005
Page Count: 2
Page(s): 162 - 163
ISBN (Paper): 1-4244-0083-X
DOI: 10.1109/ISDRS.2005.1596032
Regular:

Silicon carbide (SiC) is a very attractive material for high temperature semiconductor devices because of its very wide bandgap (3.26 eV). Due to the wide bandgap, thermal carrier generation is... View More

Advertisement