IEEE - Institute of Electrical and Electronics Engineers, Inc. - The Impact of Surface Defects on SiC Schottky and Ohmic Contact Formation

2005 International Semiconductor Device Research Symposium

Author(s): L.J. Brillson ; S.P. Tumakha ; M. Gao ; D.J. Ewing ; L.M. Porter ; R.S. Okojie ; M. Zhang ; P. Pirouz ; Q. Wahab ; X. Ma ; T.S. Sudharshan ; T. Onishi ; S. Tsukimoto ; M. Murakami
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2005
Conference Location: Bethesda, MD, USA
Conference Date: 7 December 2005
Page Count: 2
Page(s): 141 - 142
ISBN (Paper): 1-4244-0083-X
DOI: 10.1109/ISDRS.2005.1596020
Regular:

Silicon carbide is a leading semiconductor for high power, high temperature electronics, yet SiC devices still face problems of electrical contact control and reproducibility. Recent work... View More

Advertisement